Congratulations to John Simonaitis on receiving the National Science Foundation Graduate Research Fellowship. This prestigious and competitive award will support his work for three years.

The method of negative-tone polymethyl methacrylate (PMMA) electron-beam lithography is investigated to improve the performance of nanowire-based superconducting detectors. Using this approach, the superconducting nanowire single-photon detectors (SNSPDs) have been fabricated from 5-nm-thick NbN film sputtered at room temperature. To investigate the impact of this process, SNSPDs were prepared by positive-tone- and negative-tone-PMMA lithography, and their electrical and photodetection characteristics at 4.2 K were compared. The SNSPDs made by negative-tone-PMMA lithography show higher critical-current density and higher photon count rate at various wavelengths. Our results suggest a higher negative-tone-PMMA technology may be preferable to the standard positive-tone-PMMA lithography for this application.

A complete description of the work may be found here.

The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and low power dissipation, recently proposed nanowire devices offer improvements such as gain, high fanout, and compatibility with CMOS circuits. Despite these benefits, nanowire-based electronics have largely been limited to binary operations, with devices switching between the superconducting state and a high-impedance resistive state dominated by uncontrolled hotspot dynamics. Unlike the JJ, they cannot increment an output through successive switching and their operation speeds are limited by their slow thermal-reset times. Thus, there is a need for an intermediate device with the interfacing capabilities of a nanowire but a faster, moderated response allowing for modulation of the output. We present a nanowire device based on controlled fluxon transport. We show that the device is capable of responding proportionally to the strength of its input, unlike other nanowire technologies. The device can be operated to produce a multilevel output with distinguishable states, the number of which can be tuned by circuit parameters. Agreement between experimental results and electrothermal circuit simulations demonstrates that the device is classical and may be readily engineered for applications including use as a multilevel memory.

A complete description of the work may be found here.

Quantum electron microscopy (QEM) is a measurement approach that could reduce sample radiation damage, which represents the main obstacle to sub-nanometer direct imaging of molecules in conventional electron microscopes. This method is based on the exploitation of interaction-free measurements in an electron resonator. In this work, we present the design of a linear resonant electron cavity, which is at the core of QEM. We assess its stability and optical properties during resonance using ray-tracing electron optical simulations. Moreover, we analyze the issue of spherical aberrations inside the cavity and we propose and verify through simulation two possible approaches to the problem. Finally, we discuss some of the important design parameters and constraints, such as conservation of temporal coherence and effect of alignment fields.

A complete description of the work may be found here.

To better understand the origins of the timing resolution, also known as jitter, of superconducting nanowire single photon detectors (SNSPDs), we have performed timing characterizations of a niobium nitride SNSPD with a dual-ended readout. By simultaneously measuring both readout pulses along with an optical timing reference signal, we are able to quantify each independent contribution to the total measured jitter. In particular, we are able to determine values for the jitter due to the stochastic nature of hotspot formation and the jitter due to the variation of the photon detection location along the length of the nanowire. We compare the results of this analysis for measurements at temperatures of 1.5 K and 4.5 K.

A complete description of the work may be found here.